358 IEEE ELECTRON DEVICE LETTERS, VOL. EDL-I, KO. 7 , JULY 1986

Errata

In the letter “Radiation-Hardened Silicon-on-Insulator Complementary Junction Field-Effect Transistors, ’ ’ by B. -Y. Tsaur and H. K. Choi, in IEEE ELECTRON DEVICE LETTERS, vol. EDL-7, no. 5, pp. 324-326, May 1985, the concluding paragraph should read:

In conclusion, we have investigated the effects of total-dose radiation on complementary JFET’s fabricated in zone- melting-recrystallized SO1 films, Excellent radiation resist- ance up to lo8 rad(Si) has been observed for these devices with respect to threshold voltage, leakage current, and transconductance. We believe that complementary SOU JFET technology is a very promising candidate for ultra- hard integrated circuit applications.

In the letter ‘ ‘A Theory of Enhanced Impact Ionization Due to the Gate Field and Mobility Degradation in the Inversion Layer of MOSFET’s,” by Kevin Brennan and Karl Hess, which was published in the February 1986 of IEEE ELECTRON DEVICE LETTERS, vol. EDL-7, no. 2, pp. 86-88, the following corrections should be noted:

1) The dimensions of the square well in Fig. l(a) and cited throughout the paper are off by an order of Yagnitude. The correct size of the well should be 100.0 A and not 1000 A as printed. These dimensions are then consistent with the transverse electric field in the triangular well of 400 kVicm, 0.4 eVi100.0 x cm.

2 ) The units along the horizontal axis in Fig. 3 should be meV not eV.

SIMON M. SZE Editor

SIMON M. SZE Editor