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FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET

©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3

Thermal Resistance, Junction-to-Ambient, Max.

Thermal Resistance, Junction-to-Case, Max.

FDPF2710T

• Consumer Appliances• High Power and Current Handling Capability

• High Performance Trench Technology for Extremely LowR

• Low Gate Charge

• Fast Switching Speed

1 www.fairchildsemi.com

Absolute Maximum Ratings

Thermal Characteristics

Symbol Parameter UnitVDS Drain-Source Voltage 250 V

VGS Gate-Source voltage ± 30 V

ID Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)

2518.8

AA

IDM Drain Current - Pulsed (Note 1) 100 A

EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)- Derate above 25°C

62.50.5

WW/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C

Symbol ParameterRθJC 2.0 °C/W

RθJA 62.5 °C/W

FDPF2710TN-Channel PowerTrench® MOSFET 250 V, 25 A, 42.5 mΩ

• RoHS Compliant

DescriptionThis N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintain-ing superior switching performance.

Applications

• Synchronous Rectification

DS(on)

UnitFDPF2710T

• RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A

October 2013

TO-220F

GDSG

S

D

Features

(Note 4)

4. Essentially Independent of Operating Temperature Typical Characteristics

Min Typ Max Unit

2

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

Device Marking Device Package Reel Size Tape Width QuantityFDPF2710T FDPF2710T TO-220F Tube N/A 50 units

Symbol Parameter ConditionsOff Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V

∆BVDSS/ ∆TJ

Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0VVDS = 250V, VGS = 0V,TC = 125°C

----

----

10500

µAµA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 3.9 5.0 V

RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ

gFS Forward Transconductance VDS = 10V, ID = 25A -- 63 -- S

Dynamic Characteristics

Ciss Input CapacitanceVDS = 25V, VGS = 0V,f = 1.0MHz

-- 5470 7280 pF

Coss Output Capacitance -- 426 567 pF

Crss Reverse Transfer Capacitance -- 97 146 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 125V, ID = 50AVGS = 10V, RGEN = 25Ω

-- 80 170 ns

tr Turn-On Rise Time -- 252 514 ns

td(off) Turn-Off Delay Time -- 112 234 ns

tf Turn-Off Fall Time -- 154 318 ns

Qg Total Gate Charge VDS = 125V, ID = 50AVGS = 10V

-- 78 101 nC

Qgs Gate-Source Charge -- 34 -- nC

Qgd Gate-Drain Charge -- 18 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 25A -- -- 1.2 V

trr Reverse Recovery Time VGS = 0V, IS = 50AdIF/dt =130A/µs

-- 163 -- ns

Qrr Reverse Recovery Charge -- 1.3 -- µC

(Note 4)

FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET


www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.1 1 101

10

100

* Notes : 1. 250µs Pulse Test 2. TC = 25

oC

VGS Top : 15.0 V

10.0 V 8.0 V 7.0 V 6.5 V 6.0 V

Bottom : 5.5 V

I D,D

rain

Cur

rent

[A]

VDS,Drain-Source Voltage[V]

500

4 6 8 101

10

100

-55oC

150oC

* Notes :1. VDS = 20V2. 250µs Pulse Test

25oC

I D,D

rain

Cur

rent

[A]

VGS,Gate-Source Voltage[V]

250

0 25 50 75 100 125 1500.02

0.03

0.04

0.05

0.06

0.07

* Note : TJ = 25oC

VGS = 20V

VGS = 10V

RD

S(O

N) [Ω

],D

rain

-Sou

rce

On-

Res

ista

nce

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2

1

10

100

TA = 150oC

I S, R

ever

se D

rain

Cur

rent

[A]

VSD, Body Diode Forward Voltage [V]

TA = 25oC

150* Notes : 1. VGS=0V 2. 250µs Pulse Test

10-1 100 1010

3000

6000

9000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

* Note:1. VGS = 0V2. f = 1MHzCrss

Cap

acita

nces

[pF]

VDS, Drain-Source Voltage [V]30 0 10 20 30 40 50 60 70 80

0

2

4

6

8

10

* Note : ID = 50A

VDS = 50VVDS = 125VVDS = 200V

V GS,

Gat

e-S o

urce

Vol

tage

[V]

Qg, Total Gate Charge [nC]

FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET



4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

* Notes :1. VGS = 0V2. ID = 250µA

BV D

SS, [

Nor

mal

ized

]D

rain

-Sou

rce

Bre

akdo

wn

Volta

ge

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000

1

2

* Notes : 1. VGS = 10V 2. ID = 25A

r DS(

on),

[ No r

mal

ized

]D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

2.5

25 50 75 100 125 1500

10

20

30

I D, D

rain

Cur

rent

[A]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100 101 10210-3

10-2

10-1

100

0.01

0.1

0.2

0.05

0.02

* Notes : 1. ZθJC(t) = 2.0

oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulseTher

mal

Res

pons

e [

Z θJC]

Rectangular Pulse Duration [sec]

t1

PDM

t2

0.1 1 10 100 3000.01

0.1

1

10

100200

100μs

1ms

10ms

100ms

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R DS(on)

SINGLE PULSETC = 25

oC

TJ = 150oC

RθJC = 2.0oC/W

DC

FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET



5

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VVGSGS

VVDSDS

1010%%

90%90%

ttd(d(onon)) ttrr

tt onon tt ofofff

ttd(d(ooffff)) ttff

VVDDDD

VVDSDSRRLL

DUDUTT

RRGGVVGSGS

V10V10VGS

ChaCharrgege

VVGSGS

10V10VQQgg

QQgsgs QQgdgd

IG = const.3mA3mA

VVGSGS

DUDUTT

VVDSDS

300n300nFF

50K50KΩΩ

200n200nFF12V12V

SamSamee T Tyypepeas DUas DUTT

===EEEASASAS ---- ---- LLL ASASASIII1111--------2222

BVBVDSSDSS222 ----------------------------------------

BVBVDSDSSS - V- VDDDD

VVDDDD

VVDSDS

BVBVDSDSSS

t t pp

VVDDDD

IIASAS

VVDS DS (t)(t)

IID D (t)(t)

TiTimmee

DUTDUT

RRGG

LLL

III DDD

t t pp

VV10V10VGSGS

FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET



6

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

••

DUTDUT

VVDSDS

++

__

DrivDrivererRRGG

SamSamee T Tyyppee as DUTas DUT

VVGSGS •• ddvv//dtdt ccoontntrroolllleed bd byy R RGGIISDSD ccononttrrolollleded by by pu pullsse pee perriiodod

VVDDDD

LLLII SDSD

1010VVVVGSGS

( ( DrivDriver er ))

II SDSD( ( DUT DUT ))

VVDSDS( ( DUT DUT ))

VVDDDD

BoBodydy D DiiooddeeForForwward Vard Vololttagage Dre Dropop

VVSDSD

IIFMFM , Bo, Bodydy DiDiodode Fe Foorrwwaarrd Cd Cuurrrrenentt

IIRMRM

BoBodydy D Diiodode Re Reevveerrssee C Cuurrrrenentt

BoBodydy Di Diodode e RReecovcoveerryy dvdv/d/dtt

didi/d/dtt

D =D =D = ------GateGateGate--------------------------- P P Pulululsss------------------------e e e WWWiiiddd---------------ttthhhGaGaGate Pute Pute Pulllssseee PePePerrriiiododod

--- ---

FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET



7

Mechanical Dimensions

Dimension in Millimeters

TO-220F 3L

Figure 16. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET



8

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®Dual Cool™EcoSPARK®EfficentMax™ESBC™

Fairchild®Fairchild Semiconductor®FACT Quiet Series™FACT®FAST®FastvCore™FETBench™FPS™

F-PFS™FRFET®Global Power ResourceSMGreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®OPTOPLANAR®

PowerTrench®PowerXS™Programmable Active Droop™QFET®QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®STEALTH™SuperFET®SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®TinyCalc™TinyLogic®TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

FDPF2710T —

N-C

hannel PowerTrench

® MO

SFET



www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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