TCI Confidential © 2020 1
Technical Webinar
Organic Transistor
Device Fabrication / EvaluationAnd
High-Quality Organic Semiconductors (HQOS)
Nov. 26, 2020
Tokyo Chemical Industry (TCI)Organic Electronics
Material Development GroupDevice Evaluation Team
Yuji Yamaguchi
TCI Confidential © 2020 2
Speaker information
Dr. Yuji Yamaguchi
Team Leader,
Device Evaluation Team,
Organic Electronics Material Development,
Oji R&D
Career
• 2013 Ph.D. degree in engineering at Yamagata university.
• 2013 - 2016 Postdoctoral researcher, JST-CREST, Yamagata University.
• 2016 - present Tokyo Chemical Industry Co., LTD. (TCI).
Research Topics
• Materials Science
• Nanotechnology
• Organic Electronics
• Organic Transistors
• Organic Solar Cells
Organic Transistors Organic Solar Cells
-Previous works-
Terazulene Isomers: Polarity Change of OFETs Through Molecular Orbital
Distribution Contrast
Yuji Yamaguchi, Maki Takubo, Keisuke Ogawa, Ken-ichi Nakayama, Tomoyuki
Koganezawa, and Hiroshi Katagiri*
Journal of the American Chemical Society, 2016, 138, 11335-11343.
Terazulene: A High-Performance n-Type Organic Field-Effect Transistor Based
on Molecular Orbital Distribution Control
Yuji Yamaguchi, Keisuke Ogawa, Ken-ichi Nakayama*, Yoshihiro Ohba, and Hiroshi
Katagiri*
Journal of the American Chemical Society, 2013, 135, 19095-19098.
Photoprecursor approach as an effective
means for preparing multilayer organic
semiconducting thin films by solution processes
Yuji Yamaguchi, Mitsuharu Suzuki, Takao
Motoyama, Shuhei Sugii, Chiho Katagiri, Katsuya
Takahira, Shinya Ikeda, Hiroko Yamada, Ken-ichi
Nakayama;Sci. Rep. 2014, 4, DOI: 10.1038/srep07151
TCI Confidential © 2020 3
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 4
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 5
Tokyo Chemical Industry
Fukaya Factory
(Fukaya City,Saitama)
TCI Confidential © 2020 6
Synthetic Reagents
Building Blocks
Catalysis, etc.
Electronic Materials
Photonic and Optical Materials
Nanocarbon Materials, etc.
Biochemicals
Glycoscience
Antibodies, etc.
Analytical Reagents
Liquid Chromatography
Gas Chromatography, etc.
Categories Product lineup: 30,000
TCI Confidential © 2020 7
Pentacene 99.999%[P2524]
Ph-BTBT-10 >99.5%
[D5491]
[5], [6], [7], [8], [9], [10], [12] CPPs[C2931][C3386][C3571][C3544][C3465][C3493[C2449]
Carbon Nanobelt[I1078]
P3HTRegioregular >99%
[P2513]
Dibenzopentacene[D5488]
[M2088] [P2013] [P2014] [P2015]C60, C70
[B1641] [B1694]HN-D2[B4907]
HN-D1[B4908]
V886[V0146]
Corannulene[C2572]
Sumanene[S0888]
Organic Electronics Materials
TCI Confidential © 2020 8
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 9
Organic Electronics
LG
lighting
SUMITOMO CHEMICAL
Mitsubishi Chemical
Organic Transistors
Organic Light Emitting Devices(OLED) Organic Solar Cells
Organic Semiconductor Materials
TCI Confidential © 2020 10
10
Organic Transistors
Ultra-thin filmand lightweight
Yamagata UniversityTokito Lab.
Device configuration
Side view Top view
Electrode(Drain)
Electrode (Source)
Electrode (Gate)
Insulator
TCI Confidential © 2020 11
Toward practical use of “Organic Transistors”
TCI offers
“High Quality Organic Semiconductor Materials”
specialized for electrical performance.
①Development of
Semiconductor Materials
②Development of
Fabrication Processes
③Development of
Applications
TCI Confidential © 2020 12
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 13
To contribute to the material science through
high-pure synthesis, quality assurance and stable supply
Our Mission
Organic Transistor
“Semiconductor materials”
We assess the functionality of the semiconductor materials as a quality
assurance measure to confirm the electronic properties and their device
performance.
TCI Confidential © 2020 14
Simple device structure
▼
One semiconductor
material
Why Organic Transistors?
Organic Transistor
(OFET)
Organic Light Emitting Device
(OLED)Organic Photovoltaic cell
(OPV)
TCI Confidential © 2020 15
What Can It Detect?
Current value
(Slope)▼
Mobility
(performance parameter)
0.0E+00
1.0E-02
2.0E-02
3.0E-02
4.0E-02
5.0E-02
6.0E-02
-50-250
Cur
rent
Voltage
When using a high-quality semiconductor
material, a better mobility can be
detected despite the same molecular
structure.
TCI Confidential © 2020 16
0.0E+00
1.0E-02
2.0E-02
3.0E-02
4.0E-02
5.0E-02
6.0E-02
-50-250
An effect of low amount of impurities on the transistor performance
Obvious difference
in the current values
▼
Both SamplesHPLC: >99.5%
Cur
rent
Voltage
Both purities are over 99.5%
Clear difference in OFET performance
We can offer real “usable material”
Mobility: > 10.0 cm2/Vs(ODTS Si/SiO2 substrate)
What Can It Do?
Mobility:
12.0 cm2/Vs
Mobility:
5.2 cm2/Vs
TCI Confidential © 2020 17
High-Quality Organic Semiconductors (HQOS)
• In this new category, each product is set a mobility* as our original quality standard.
• Every lot of the products are analyzed by the in-house transistor device test.
• Only lots that pass this functional test are packed and shipped as “HQOS”
• We can offer real “usable material” to organic electronics research fields.
Unique points
* The mobility refers to device evaluation measurements obtained within our facility.
TCI Confidential © 2020 18
Product lineup of HQOS
P3HT
[P2513]
Phthalocyanine
[P2734]
CuPc
[C3645]
Pentacene
[P2524]
TIPS-Pentacene
[B5942]
Fundamental materials: 8
Ph-BTBT-10
[D5491]
TU-1
[T3922]
TU-3
[T3924]S-DNTT-10
[D5796]
Ph-BTBT-4
[B6248]
Ph-BTBT-6
[H1769]
Ph-BTBT-8
[O0576]
Ph-BTBT-12
[D5910]
High-performance materials (TCI unique): 8
[60]PCBM
[P2682]
[70]PCBM
[P2683]C70
[F1233]
For a wider product lineup,
we also provide normal
semiconductor products.
(without device tests)
Please access TCI website.
TCI Confidential © 2020 19
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 20
「Pentacene」
TCI Confidential © 2020 21
OFET device fabrication: Pentacene
-Details-
< Vacuum Deposition >
•Deposition rate of Pentacene: 0.1 Å/s (under a pressure of∼10−5 Pa)
•Substrate temperature during deposition: RT
•Deposition rate of Au: 0.3 Å/s, (under a pressure of ∼10−4 Pa)
< Device Configuration >
•[n+-Si/SiO2 (200 nm) / Pentacene (60 nm) / Au (60 nm)]
Channel length
50 m
Pentacene-based transistor device
Channel width
1.5 mm
Drain
pentacene
Insulator (SiO2)
Gate (n+-Si)
Source
②pentacene
Insulator (SiO2)
Gate (n+-Si)Vacuum deposition of
pentacene
on the Si/SiO2 substrate
Vacuum deposition of
Au
on the pentacene
Making a semiconductor layer Making electrodes
Insulator (SiO2)
Gate (n+-Si)
n+-Si/SiO2 substrate
①
TCI Confidential © 2020 22
Comparison with other companies’ sublimed pentacene
All pentacene are sublimation grade (High-pure reagent)
Clear difference in transistor performance (electrical property)
We can offer real “usable material”
Mobility: > 0.35 cm2/vs(bare Si/SiO2 substrate)
TCI Confidential © 2020 23
Poor quality pentacene
• Difficult to take “edge-on”
• Not suitable for current flows
Good quality pentacene
• Easy to take “edge-on”
• Suitable for current flows
Images of molecular arrangement
TCI Confidential © 2020 24
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 25
「P3HT」
TCI Confidential © 2020 26
OFET device fabrication: P3HT
Details
< Spin-Coating >
• P3HT 10 mg/ml, 1,2,4-Trichlorobenzene:Chloroform (2:98) mixed solvent
•Spin-coating condition: 1500 RPM, 60 sec, N2
< Vacuum Deposition >
•Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−4 Pa)
< Post-Annealing Treatment >
•Annealing condition: 100 ºC, 30 min, N2
< Device Configuration >
•[n+-Si/SiO (300 nm) / P3HT (100 nm) / Au (40 nm)]
Drain
P3HT
Source
P3HT
Spin-coating of
P3HT
on the Si/SiO2 substrate
Vacuum deposition of
Au
on the P3HT
Making a semiconductor layer Making electrodes
Insulator (SiO2)
Gate (n+-Si)
n+-Si/SiO2 substrate
②①
Channel length
50 m
P3HT-based transistor device
Channel width
1.5 mm
Insulator (SiO2)
Gate (n+-Si)Insulator (SiO2)
Gate (n+-Si)
TCI Confidential © 2020 27
Comparison with other companies’P3HT
Clear difference in transistor performance (electrical property)
“Mobility(electrical property)” highly dependents on its “Regioregularity (RR)”
We can offer real “usable material”
Mobility: > 0.10 cm2/vs(OTS Si/SiO2 substrate)
TCI Confidential © 2020 28
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 29
Ph-BTBT-10, a liquid crystalline material, has
been reported by H. Iino et al.1)
Ph-BTBT-10 exhibited an ultra-high mobility
of 11 cm2/Vs via spin-coting method.1)
1) H. Iino, T. Usui, J. Hanna, Nat. Commun. 2015, 6, 6828.
「Ph-BTBT-n series」
TCI Confidential © 2020 30
OFET device fabrication: Ph-BTBT-10
Details
< Vacuum Deposition>
•Deposition rate of Ph-BTBT-10 0.1 Å/s (under a pressure of∼10−5
Pa)
•Substrate temperature during deposition: 60 °C
•Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−5 Pa)
< Post-Annealing Treatment>
•Annealing condition: 120 ºC, 5 min, N2
< Device configuration>
•[n+-Si/SiO2 (200 nm) / Ph-BTBT-10 (40 nm) / Au (40 nm)]
Drain
Ph-BTBT-10
Insulator
Gate
Source
②Ph-BTBT-10
Insulator (SiO2)
Gate (n+-Si)Vacuum deposition of
Ph-BTBT-10
on the Si/SiO2 substrate
Vacuum deposition of
Au
on the pentacene
Making a semiconductor layer Making electrodes
Insulator (SiO2)
Gate (n+-Si)
n+-Si/SiO2 substrate
①
Channel length
50 m
Ph-BTBT-10-based transistor device
Channel width
1.5 mm
TCI Confidential © 2020 31
Comparison with typical transistor materials
compound Ph-BTBT-10 C8-BTBT DNTT
structure
mobility 11 4.2 0.74
Applicable to both dry and wet processes
Clear difference in transistor performance (electrical property)
Ph-BTBT-10 showed the most excellent OFET performance
Mobility: > 10.0 cm2/vs(ODTS Si/SiO2 substrate)
TCI Confidential © 2020 32
Ph-BTBT-4
[B6248]
New!
Ph-BTBT-6
[H1769]
New!
Ph-BTBT-8
[O0576]
New!
Ph-BTBT-10
[D5491]Ph-BTBT-12
[D5910]
New!
Comparison of mobilities
0.1
1
10
2 4 6 8 10 12 14
Mobili
ty /
cm
2/V
s
Alkyl chain length : -CnH2n+1
Si/SiO2 bare substrates
Vacuum
deposition
Solubility in organic solvents
0
10
20
30
40
50
2 4 6 8 10 12 14
Solu
bili
ty /
mm
ol/L
Alkyl chain length: -CnH2n+1
cyclohexane
toluene
p-xylene
chloroform
chlorobenzene
High mobility / High solubility p-type Organic Semiconductor: “Ph-BTBT-n Series”
TCI Confidential © 2020 33
Ph-BTBT-4
[B6248]
New!
Ph-BTBT-6
[H1769]
New!
Ph-BTBT-8
[O0576]
New!
Ph-BTBT-10
[D5491]Ph-BTBT-12
[D5910]
New!
High mobility / High solubility p-type Organic Semiconductor: “Ph-BTBT-n Series”
Advantages
• “Mobility” and “Solubility” highly depend on the alkyl chain length
• Material choice according to user’s purpose and operating environment
• Applicable to both dry and wet processes
TCI Confidential © 2020 34
Topics
1. Introduction
• Tokyo Chemical Industry (TCI)
• Organic Electronics
2. New attempt for high quality semiconductor products
3. Fabrication and evaluation of OFET devices
“Fundamental materials”
• 「Pentacene」• 「P3HT」
“High-performance materials”
• 「Ph-BTBT-n series」• 「TU-n series」
TCI Confidential © 2020 35
「TU-n series」
Vacuum
deposited
methodSpin-coating
method
TCI Confidential © 2020 36
OFET device fabrication: TU-1
Details
< Vacuum Deposition>
•Deposition rate of TU-1 0.1 Å/s (under a pressure of∼10−5 Pa)
•Substrate temperature during deposition: 60 °C
•Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−5 Pa)
< Post-Annealing Treatment>
•Annealing condition: 150 ºC, 30 min, N2
< Device configuration>
•[n+-Si/SiO2 (200 nm) / TU-1 (40 nm) / Au (40 nm)]
Drain
TU-1
Insulator (SiO2)
Gate (n+-Si)
Source
②TU-1
Insulator (SiO2)
Gate (n+-Si)Vacuum deposition of
TU-1
on the Si/SiO2 substrate
Vacuum deposition of
Au
on the TU-1
Making a semiconductor layer Making electrodes
Insulator (SiO2)
Gate (n+-Si)
n+-Si/SiO2 substrate
①
TU-1
Channel length
50 m
Channel width
1.5 mm
TCI Confidential © 2020 37
OFET device fabrication: TU-3
Details
< Spin-Coating >
• TU-3 0.1wt% in chloroform
•Spin-coating condition: 1000 RPM, N2
< Vacuum Deposition >
•Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−4 Pa)
< Post-Annealing Treatment >
•Annealing condition: 180 ºC, 30 min, N2
< Device Configuration >
•[n+-Si/SiO (200 nm) / TU-3 (20 nm) / Au (40 nm)]
Drain
TU-3
Source
TU-3
Spin-coating of
TU-3
on the Si/SiO2 substrate
Vacuum deposition of
Au
on the TU-3
Making a semiconductor layer Making electrodes
Insulator (SiO2)
Gate (n+-Si)
n+-Si/SiO2 substrate
②①
Insulator (SiO2)
Gate (n+-Si)Insulator (SiO2)
Gate (n+-Si)
TU-3
Channel length
50 m
Channel width
1.5 mm
TCI Confidential © 2020 38
OFET device performance: TU-1 and TU-3
TU-1
[T3922]
TU-3
[T3924]
OR
TU-1
[T3922]
TU-3
[T3924]
compound TU-1 TU-3
Fabrication
method
Vacuum
depositionSpin-coating
Mobility
(cm2/vs)1.2 1.3
Applicable to both dry and/or wet processes
High performance n-type semiconductor materials
Mobility: > 1.0 cm2/vs
TCI Confidential © 2020 39
Summary
TCI Confidential © 2020 40
“New” Organic Transistor Webpage
Articles about product
introduction, device
assessment and
collaboration with
academia and industry.
Details of device
fabrication methods and
device characteristics.
(including other than
HQOS products)
Data list of physical
properties for our
products (e.g. UV-Vis
spectra and 2D-GIXD).
About High-Quality
Organic Semiconductors
(HQOS).
Since Jul. 2020
https://www.tcichemicals.com/IN/en/product/organic-electronics/organic-transistor/index
TCI Confidential © 2020 41
Tokyo Chemical Industry
"Serving Society through Chemical Reagents"