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    Apresentation on

    45 Nanometer Technology

    Guided by:Vikas Tiwa

    H..!"#.$.#. !ept.%

    &resented by:

    'hawna kalra

    (iddhi Vinayak $ollege o) (c. * hr.

    #ducation"Alwar)

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    Presentation fow

    NeedIntroductionn

    45 nm technology

    Features

    Products

    Advantages

    Future applications

    Conclusion

    Reerence

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    Need o nm !echnology As V+(, technology has progressed to pack smaller- )aster and

    increasing number o) transistors on a single chip .

    $opper+ow/k interconnect technologies )or sub/011 nm $2( ,$sare impacting system per)ormance through increased power

    dissipation- signal delay- and cross/talk. .

    3ith clock )reuencies increasing into the GH regime- the parasitic

    resistance- capacitance and inductance associated with these wireso)ten lead to per)ormance bottlenecks which ha6e led the

    semiconductor and the electronic design automation industries to

    adopt se6eral technological inno6ations.

    7urthermore- pre6alent high chip temperatures "aggra6ated by largepower dissipation o) nanometer scale ,$s% and increasing current

    densities in wires make electromigration in copper a constant threat

    to V+(, circuits.

    To o6ercome all these problems nm technology is used.

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    Nanometer !echnology

    Nanometer is the art and science omanipulating matter at the nano scale"down to #$#%&&%&&& the width o thehuman hair ) to creat new and uni'uematerials and products((withenormous potential to change societry

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    Nanometer why*

    !iny +i,e Incredi-le surace area per unit mass

    .ight weight

    +trong

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    Intel +RA/ !est Chips

    #0& nmprocess

    145 2m3 cell# /-its

    #&0 mm3/arch &&

    6& nmProcess# 2m3 cell5&/-its

    #&6 mm3Fe-ruary &1

    75 nmprocess

    &58 2m3 cell8& /-its

    ##& mm3April &4

    45 nmprocess&0472m3#50 /-its

    ##6 mm39anuary &7

    New +RA/ !est :ehicles developed every 1 years to held

    development o logic technologies

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    45 nm !echnology

    Intel is ;rst to reach an importantmilestone in the development o 45 nmlogic technology

    Fully unctional #50 /-it +RA/ chips have-een made with < # -illion transistor each

    !he memory cell si,e on this +RA/ is&047 2m3%almost hal the si,e o 75 nmcell

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    45nm =igh>? @ /etal ate !ransistors

    65 nm Transistor 45 nm HK + MG

    Ha)nium/based high/k 8 metal gate transistors are the biggest

    ad6ancement in transistor technology

    TEM TEM

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    ene s ompare onm

    >25x lower gate oxide leakage

    >30% lower swit!ing "ower

    #30% !ig!er dri$e rrent

    >5x lower sore&drain leakage

    HiK gate insulatorintroduced at 45nm $2( node to reduce gate leakage

    Metal Gateintroduced at 45nm $2( node to eliminate poly depletion

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    .ogic Processing trends

    .ogic Processing trends

    Perormance and unctionality continue toimprove with increased transistor count

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    The Road to HK+MG Processors

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    !ransistor Bensity Perormance

    raphs represents transistor perormance Bensity

    !ransistor BensityIntel 45 nm transistors

    provide the tightest gatepitch from 65nm

    technology

    !ransistorPerormance

    Intel 45nm transistorsprovide the higher drive

    currents from 65nm

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    +RA/ Cell +i,e +caling

    45 nm, 0.346 um2

    32 nm, 0.171 um2

    65 nm, 0.570 um2

    Transistor density continues to double every 2 years

    7 transistor +RA/ area o &047 2m3

    #60 nm dry lithography used to patter critical layers

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    45 nm microprocessor Products

    a

    +ingle

    core

    7 core

    Bual

    Core

    core

    Duad

    core

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    Changes in ScalingTHE+caling droveperormance Perormanceconstrained

    Active powerdominates Independent design>process

    !" /aterials driveperormance Power constrained +tand-y power

    dominates Colla-orative desigprocess

    6& nm 75 nm 45 n#0& nm

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    Advantages Benefits Compared to 65 nm

    >25x lower gate oxide leakage

    >30% lower switching power

    ~30% higher drive current

    >5x lower source-drain leakage

    Overall advantages

    Tiny Size

    Inredi!le surfae area per unit mass

    "ig#t $eig#t%

    Strong

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    Applications o 45 nm

    Gnergy applications

    Industrial applications

    Brugs Cancer detection andtreatment

    Potential applications o car-on

    nanotu-esGlectronics

    Gnvironmental Applications green

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    CHNC.E+IHN

    45 nm logic technology is -eing

    demonstrated on ully unctional #50 /-its+RA/ chips with < # -illion transistors

    !hese +RA/ test chips eercise all o thetransistor interconnect eatures to -e used on45 nm microprocessors

    !his 45 nm technology provides signi;cantdensity %perormance power improvementsover todayJs 75 nm technology

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    Reerence

    (. 9. Nassi)- 3ithin/chip 6ariability analysis-; in ,#!2 Tech. !ig.- 0=.

    #. B. !udewic and (. N. 2ishra- 2odern 2athematical (tatistics.

    Hoboken- NB: 3iley- 0

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    A

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    N

    K

    LH

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1 Observaciones NM

1 Observaciones NM

Esquema Física Nm v2

Esquema Física Nm v2

NM Presentation

NM Presentation

Fisica Atomica (NM)

Fisica Atomica (NM)

union NM 2

union NM 2

SKSM SANTA MARTA - aerocivil.gov.co · 10 57 45 N 074 14 26 W 10 57 45 N 074 14 26 W 34,02 ft 34,02 ft Cobertura 100 NM Cobertura 150 NM 20. REGLAMENTACION LOCAL • Ejercer precaución

SKSM SANTA MARTA - aerocivil.gov.co · 10 57 45 N 074 14 26 W 10 57 45 N 074 14 26 W 34,02 ft 34,02 ft Cobertura 100 NM Cobertura 150 NM 20. REGLAMENTACION LOCAL • Ejercer precaución

Noris Catalog IN updateдля ПДФengmedservice.com/files/uploads/_pdf/Noris_Catalog_11_2013.pdf · 11.5 NM-G3711 13 NM-G3713 16 NM-G3716 4.2 3.2 6 NM-G4206 8 NM-G4208 10 NM-G4210

Noris Catalog IN updateдля ПДФengmedservice.com/files/uploads/_pdf/Noris_Catalog_11_2013.pdf · 11.5 NM-G3711 13 NM-G3713 16 NM-G3716 4.2 3.2 6 NM-G4206 8 NM-G4208 10 NM-G4210

CRISTALINIDAD DE NANOPARTÍCULAS DE Ge MEDIANTE ... · da de 19.2 y 10 nm para las excitaciones de 514.5 nm y 325 nm, respectivamente en el Ge, y de 765 nm y 9 nm en el Si. ... número

CRISTALINIDAD DE NANOPARTÍCULAS DE Ge MEDIANTE ... · da de 19.2 y 10 nm para las excitaciones de 514.5 nm y 325 nm, respectivamente en el Ge, y de 765 nm y 9 nm en el Si. ... número

M G OLF C URSE SERV ICE C V E R · nm nm nm nm nm nm nm nm nm \ \ \ nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm n nm nm nm nm nm nm nm nm nm nm nm nm

M G OLF C URSE SERV ICE C V E R · nm nm nm nm nm nm nm nm nm \ \ \ nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm n nm nm nm nm nm nm nm nm nm nm nm nm

Plan nm amway colombia

Plan nm amway colombia

MAPA DE VALORES DE TERRENOS POR ZONAS ... del...G G G G G G nm G G G nm G nm nm nm nm nm G nm nm nm Alajuela Poás Barva Heredia Flores Heredia Grecia San Rafael Belén JESÚS SANTO

MAPA DE VALORES DE TERRENOS POR ZONAS ... del...G G G G G G nm G G G nm G nm nm nm nm nm G nm nm nm Alajuela Poás Barva Heredia Flores Heredia Grecia San Rafael Belén JESÚS SANTO

MAPA DE VALORES DE TERRENOS POR ZONAS HOMOGÉNEAS … · 2018-10-23 · nm æ æ nm nm nm nm æ nm nm nm nm nm nmæ nm nm nmæ nmnm nm nmæ nm æ nm æ æ nm nm nm nm nmæ nm nm nm

MAPA DE VALORES DE TERRENOS POR ZONAS HOMOGÉNEAS … · 2018-10-23 · nm æ æ nm nm nm nm æ nm nm nm nm nm nmæ nm nm nmæ nmnm nm nmæ nm æ nm æ æ nm nm nm nm nmæ nm nm nm

NM 11 2012

NM 11 2012

Nivelación nm 3

Nivelación nm 3

MONOGRAFÍA DE BIOLOGÍA NM

MONOGRAFÍA DE BIOLOGÍA NM

NM, NMD Bombas centrífugas monobloc · NM, NMD con orificios roscados ... NBR 1 3 Q H 2 3 4 5 6 7 8 9 10 20 30 40 50 100 4 5 10 20 30 40 NM 1 NM 2 NM 11 ... 67* B-NM NM B-NM 17/HE

NM, NMD Bombas centrífugas monobloc · NM, NMD con orificios roscados ... NBR 1 3 Q H 2 3 4 5 6 7 8 9 10 20 30 40 50 100 4 5 10 20 30 40 NM 1 NM 2 NM 11 ... 67* B-NM NM B-NM 17/HE

union NM 4

union NM 4

Revista Ingeniería de Construcción RIC Vol 29 Nº2 2014 www ... · Peso Específico (g/cm3)/ NBR NM 52 (ABNT,2009) 2.64 2.64 Índice de vacíos (%)/ NBR NM 45 (ABNT,2006) 48 43

Revista Ingeniería de Construcción RIC Vol 29 Nº2 2014 www ... · Peso Específico (g/cm3)/ NBR NM 52 (ABNT,2009) 2.64 2.64 Índice de vacíos (%)/ NBR NM 45 (ABNT,2006) 48 43

MAPA GEOLÓGICO DEL CUADRÁNGULO TACNA - HOJA 37v-IV …€¦ · P amp L Y r d Pampa de Magollo N m- i Nm-mi Nm-mi Nm-mi Nm-mi Nm-mi N m- i Nm-mi Nm-mi Q-al1 Q-al1 Nm-hu/s Q-al3 Q-al3

MAPA GEOLÓGICO DEL CUADRÁNGULO TACNA - HOJA 37v-IV …€¦ · P amp L Y r d Pampa de Magollo N m- i Nm-mi Nm-mi Nm-mi Nm-mi Nm-mi N m- i Nm-mi Nm-mi Q-al1 Q-al1 Nm-hu/s Q-al3 Q-al3

PANESPOL SYSTEMS TRANSFORMAMOS AMBIENTES CON UN … · 2019. 9. 2. · NATURAL NM-000 NM-600 NM-602 NM-601 NM-603 NM-604 NM-605 PANESPOL NATURAL permite introducir NATURAL MOSS literalmente

PANESPOL SYSTEMS TRANSFORMAMOS AMBIENTES CON UN … · 2019. 9. 2. · NATURAL NM-000 NM-600 NM-602 NM-601 NM-603 NM-604 NM-605 PANESPOL NATURAL permite introducir NATURAL MOSS literalmente