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Apresentation on
45 Nanometer Technology
Guided by:Vikas Tiwa
H..!"#.$.#. !ept.%
&resented by:
'hawna kalra
(iddhi Vinayak $ollege o) (c. * hr.
#ducation"Alwar)
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Presentation fow
NeedIntroductionn
45 nm technology
Features
Products
Advantages
Future applications
Conclusion
Reerence
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Need o nm !echnology As V+(, technology has progressed to pack smaller- )aster and
increasing number o) transistors on a single chip .
$opper+ow/k interconnect technologies )or sub/011 nm $2( ,$sare impacting system per)ormance through increased power
dissipation- signal delay- and cross/talk. .
3ith clock )reuencies increasing into the GH regime- the parasitic
resistance- capacitance and inductance associated with these wireso)ten lead to per)ormance bottlenecks which ha6e led the
semiconductor and the electronic design automation industries to
adopt se6eral technological inno6ations.
7urthermore- pre6alent high chip temperatures "aggra6ated by largepower dissipation o) nanometer scale ,$s% and increasing current
densities in wires make electromigration in copper a constant threat
to V+(, circuits.
To o6ercome all these problems nm technology is used.
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Nanometer !echnology
Nanometer is the art and science omanipulating matter at the nano scale"down to #$#%&&%&&& the width o thehuman hair ) to creat new and uni'uematerials and products((withenormous potential to change societry
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Nanometer why*
!iny +i,e Incredi-le surace area per unit mass
.ight weight
+trong
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Intel +RA/ !est Chips
#0& nmprocess
145 2m3 cell# /-its
#&0 mm3/arch &&
6& nmProcess# 2m3 cell5&/-its
#&6 mm3Fe-ruary &1
75 nmprocess
&58 2m3 cell8& /-its
##& mm3April &4
45 nmprocess&0472m3#50 /-its
##6 mm39anuary &7
New +RA/ !est :ehicles developed every 1 years to held
development o logic technologies
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45 nm !echnology
Intel is ;rst to reach an importantmilestone in the development o 45 nmlogic technology
Fully unctional #50 /-it +RA/ chips have-een made with < # -illion transistor each
!he memory cell si,e on this +RA/ is&047 2m3%almost hal the si,e o 75 nmcell
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45nm =igh>? @ /etal ate !ransistors
65 nm Transistor 45 nm HK + MG
Ha)nium/based high/k 8 metal gate transistors are the biggest
ad6ancement in transistor technology
TEM TEM
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ene s ompare onm
>25x lower gate oxide leakage
>30% lower swit!ing "ower
#30% !ig!er dri$e rrent
>5x lower sore&drain leakage
HiK gate insulatorintroduced at 45nm $2( node to reduce gate leakage
Metal Gateintroduced at 45nm $2( node to eliminate poly depletion
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.ogic Processing trends
.ogic Processing trends
Perormance and unctionality continue toimprove with increased transistor count
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The Road to HK+MG Processors
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!ransistor Bensity Perormance
raphs represents transistor perormance Bensity
!ransistor BensityIntel 45 nm transistors
provide the tightest gatepitch from 65nm
technology
!ransistorPerormance
Intel 45nm transistorsprovide the higher drive
currents from 65nm
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+RA/ Cell +i,e +caling
45 nm, 0.346 um2
32 nm, 0.171 um2
65 nm, 0.570 um2
Transistor density continues to double every 2 years
7 transistor +RA/ area o &047 2m3
#60 nm dry lithography used to patter critical layers
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45 nm microprocessor Products
a
+ingle
core
7 core
Bual
Core
core
Duad
core
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Changes in ScalingTHE+caling droveperormance Perormanceconstrained
Active powerdominates Independent design>process
!" /aterials driveperormance Power constrained +tand-y power
dominates Colla-orative desigprocess
6& nm 75 nm 45 n#0& nm
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Advantages Benefits Compared to 65 nm
>25x lower gate oxide leakage
>30% lower switching power
~30% higher drive current
>5x lower source-drain leakage
Overall advantages
Tiny Size
Inredi!le surfae area per unit mass
"ig#t $eig#t%
Strong
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Applications o 45 nm
Gnergy applications
Industrial applications
Brugs Cancer detection andtreatment
Potential applications o car-on
nanotu-esGlectronics
Gnvironmental Applications green
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CHNC.E+IHN
45 nm logic technology is -eing
demonstrated on ully unctional #50 /-its+RA/ chips with < # -illion transistors
!hese +RA/ test chips eercise all o thetransistor interconnect eatures to -e used on45 nm microprocessors
!his 45 nm technology provides signi;cantdensity %perormance power improvementsover todayJs 75 nm technology
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Reerence
(. 9. Nassi)- 3ithin/chip 6ariability analysis-; in ,#!2 Tech. !ig.- 0=.
#. B. !udewic and (. N. 2ishra- 2odern 2athematical (tatistics.
Hoboken- NB: 3iley- 0
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A
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N
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